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TC58NVG0S3ETA00 2011-03-01c 1 toshiba mos digital integrated circuit silicon gate cmos 1 gbit (128m 8 bit) cmos nand e 2 prom description the tc58nvg0s3e is a single 3.3v 1 gbit (1,107,296,256 bits) nand electrically erasable and programmable read-only memory (nand e 2 prom) organized as (2048 + 64) bytes 64 pages 1024blocks. the device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. the erase operation is implemented in a single block unit (128 kbytes + 4 kbytes: 2112 bytes 64 pages). the tc58nvg0s3e is a serial-type memory device whic h utilizes the i/o pins for both address and data input/output as well as for command in puts. the erase and program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recordin g, image file memory for still cameras and other systems which require high-d ensity non-volatile memory data storage. features ? organization x8 memory cell array 2112 64k 8 register 2112 8 page size 2112 bytes block size (128k + 4k) bytes ? modes read, reset, auto page program, auto block erase, status read, page copy, multi page program, multi block erase, multi page copy, multi page read ? mode control serial input/output command control ? number of valid blocks min 1004 blocks max 1024 blocks ? power supply v cc = 2.7v to 3.6v ? access time cell array to register 25 s max serial read cycle 25 ns min (cl=100pf) ? program/erase time auto page program 300 s/page typ. auto block erase 2.5 ms/block typ. ? operating current read (25 ns cycle) 30 ma max. program (avg.) 30 ma max erase (avg.) 30 ma max standby 50 a max ? package tsop i 48-p-1220-0.50 (weight: 0.53 g typ.)
TC58NVG0S3ETA00 2011-03-01c 2 pin assignment (top view) pin names i/o1 to i/o8 i/o port ce chip enable we write enable re read enable cle command latch enable ale address latch enable wp write protect by/ ry ready/busy v cc power supply v ss ground nc nc nc nc i/o8 i/o7 i/o6 i/o5 nc nc nc v cc v ss nc nc nc i/o4 i/o3 i/o2 i/o1 nc nc nc nc 1 48 2 47 3 46 4 45 5 44 6 43 7 42 8 41 9 40 10 39 11 38 12 37 13 36 14 35 15 34 16 33 17 32 18 31 19 30 20 29 21 28 22 27 23 26 24 25 nc nc nc nc nc nc by/ry re ce nc nc v cc v ss nc nc cle ale we wp nc nc nc nc nc 8 8 TC58NVG0S3ETA00
TC58NVG0S3ETA00 2011-03-01c 3 block diagram absolute maximum ratings symbol rating value unit v cc power supply voltage ? 0.6 to 4.6 v v in input voltage ? 0.6 to 4.6 v v i/o input /output voltage ? 0.6 to v cc + 0.3 ( 4.6 v) v p d power dissipation 0.3 w t solder soldering temperature (10 s) 260 c t stg storage temperature ? 55 to 150 c t opr operating temperature 0 to 70 c capacitance * (ta = 25c, f = 1 mhz) symb0l parameter condition min max unit c in input v in = 0 v ? 10 pf c out output v out = 0 v ? 10 pf * this parameter is periodically samp led and is not tested for every device. i/o control circuit status register command register column buffer column decoder data register sense amp memory cell array control circuit hv generator row address decoder logic control by/ry v cc i/o1 v ss i/o8 ce cle ale we re by/ry row address buffer decoder to wp address register
TC58NVG0S3ETA00 2011-03-01c 4 valid blocks symbol parameter min typ. max unit n vb number of valid blocks 1004 ? 1024 blocks note: the device occasionally contains unus able blocks. refer to application note (13) toward the end of this document. the first block (block 0) is guaranteed to be a valid block at the time of shipment. the specification for the minimum number of valid blocks is applicable over lifetime the number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane operations. recommended dc operating conditions symbol parameter min typ. max unit v cc power supply voltage 2.7 ? 3.6 v v ih high level input voltage 2.7 v v cc 3.6 v vcc x 0.8 ? v cc + 0.3 v v il low level input voltage 2.7 v v cc 3.6 v ? 0.3 * ? vcc x 0.2 v * ? 2 v (pulse width lower than 20 ns) dc characteristics (ta = 0 to 70 ? , v cc = 2.7 to 3.6v) symbol parameter condition min typ. max unit i il input leakage current v in = 0 v to v cc ? ? 10 a i lo output leakage current v out = 0 v to v cc ? ? 10 a i cco1 serial read current ce = v il , i out = 0 ma, tcycle = 25 ns ? ? 30 ma i cco2 programming current ? ? ? 30 ma i cco3 erasing current ? ? ? 30 ma i ccs standby current ce = v cc ? 0.2 v, wp = 0 v/v cc ? ? 50 a v oh high level output voltage i oh = ? 0.1 ma vcc ? 0.2 ? ? v v ol low level output voltage i ol = 0.1 ma ? ? 0.2 v i ol ( by/ ry ) output current of by/ry pin v ol = 0.2 v ? 4 ? ma
TC58NVG0S3ETA00 2011-03-01c 5 ac characteristics and recommended operating conditions (ta = 0 to 70 ? , v cc = 2.7 to 3.6v) symbol parameter min max unit t cls cle setup time 12 ? ns t clh cle hold time 5 ? ns t cs ce setup time 20 ? ns t ch ce hold time 5 ? ns t wp write pulse width 12 ? ns t als ale setup time 12 ? ns t alh ale hold time 5 ? ns t ds data setup time 12 ? ns t dh data hold time 5 ? ns t wc write cycle time 25 ? ns t wh we high hold time 10 ? ns t ww wp high to we low 100 ? ns t rr ready to re falling edge 20 ? ns t rw ready to we falling edge 20 ? ns t rp read pulse width 12 ? ns t rc read cycle time 25 ? ns t rea re access time ? 20 ns tcea ce access time ? 25 ns t clr cle low to re low 10 ? ns t ar ale low to re low 10 ? ns t rhoh re high to output hold time 22 ? ns t rloh re low to output hold time 5 ? ns t rhz re high to output high impedance ? 60 ns t chz ce high to output high impedance ? 20 ns t csd ce high to ale or cle don?t care 0 ? ns t reh re high hold time 10 ? ns t ir output-high-impedance-to- re falling edge 0 ? ns t rhw re high to we low 30 ? ns t whc we high to ce low 30 ? ns t whr we high to re low 60 ? ns t r memory cell array to starting address ? 25 s t dcbsyr1 data cache busy in read cache (following 31h and 3fh) ? 30 s t dcbsyr2 data cache busy in page copy (following 3ah) ? 35 s t wb we high to busy ? 100 ns t rst device reset time (ready/read/program/erase) ? 6/6/10/500 s *1: tcls and tals can not be shorter than twp *2: tcs should be longer than twp + 8ns.
TC58NVG0S3ETA00 2011-03-01c 6 ac test conditions condition parameter v cc : 2.7 to 3.6v input level v cc ? 0.2 v, 0.2 v input pulse rise and fall time 3 ns input comparison level vcc / 2 output data comparison level vcc / 2 output load c l (100 pf) + 1 ttl note: busy to ready time depends on the pull-up resistor tied to the by/ ry pin. (refer to application note (9) toward the end of this document.) programming and erasing characteristics (ta = 0 to 70 ? , v cc = 2.7 to 3.6v) symbol parameter min typ. max unit notes t prog average programming time ? 300 700 s t dcbsyw1 data cache busy time in write cache (following 11h) ? ? 10 s t dcbsyw2 data cache busy time in write cache (following 15h) ? ? 700 s (2) n number of partial program cycles in the same page ? ? 4 (1) t berase block erasing time ? 2.5 10 ms (1) refer to application note (12) toward the end of this document. (2) t dcbsyw2 depends on the timing between internal programming time and data in time. data output when treh is long, output buffers are disabled by /re=high, and the hold time of da ta output depend on trhoh (25ns min). on this condition, wavefo rms look like normal serial read mode. when treh is short, output buffers are not disabled by /re=high, and the hold time of data output depend on trloh (5ns min). on this condition, output buffers are disabled by the rising edge of cle,ale,/ce or falling edge of /we, and waveforms look like extended data output mode.
TC58NVG0S3ETA00 2011-03-01c 7 timing diagrams latch timing diagram for command/address/data command input cycle timing diagram cle ale ce re we hold time t dh setup time t ds i/o : v ih or v il t cs t dh t ds t als t alh t wp t cls t ch t clh : v ih or v il ce cle we ale i/o
TC58NVG0S3ETA00 2011-03-01c 8 address input cycle timing diagram data input cycle timing diagram we t wp t wp t wh t wp t als t wc t dh t ds d in 0 d in 1 t clh t ch ale cle ce i/o d in 2111 t dh t ds t dh t ds t cs t cls t ch t cs t alh pa8 to 15 ca8 to 11 : v ih or v il t dh t ds t cls cle t als t alh t wp t wh t wp ca0 to 7 t dh t ds t cs t cs ce we ale i/o t dh t ds t wp t wh t dh t ds t wp t wh t wc pa0 to 7 t clh t ch t ch
TC58NVG0S3ETA00 2011-03-01c 9 serial read cycle timing diagram status read cycle timing diagram t reh t chz ce t rhz t rea t rc t rr t rhz t rea t rhz t rea re by/ry i/o t rhoh t rhoh t rhoh t rp t rp t rp : v ih or v il t cea t cea : v ih or v il * : 70h represents the hexadecimal number t whr we t dh t ds t cls t clr t cs t clh t ch t wp status output 70h * t whc t ir t rea t rhz t chz ce cle re by/ry i/o t rhoh t cea
TC58NVG0S3ETA00 2011-03-01c 10 read cycle timing diagram read cycle timing diagram: when interrupted by ce t clr 30h pa8 to 15 pa0 to 7 ca8 to 11 ca0 to 7 i/o t cs t cls t clh t ch t dh t ds t wc t als t alh we cle ce ale re t dh t ds t dh t ds t dh t ds t dh t ds t alh t r t dh t ds t wb t cs t cls t clh t ch t als t rc t rr t rea col. add. n data out from col. add. n 00h d out n d out n + 1 by/ry t cea 30h pa8 to 15 pa0 to 7 ca8 to 11 ca0 to 7 i/o t cs t cls t clh t ch t dh t ds t wc t als t alh we cle ce ale re t dh t ds t dh t ds t dh t ds t dh t ds t alh t clr t r t dh t ds t wb t cs t cls t clh t ch t als t rc t rr t rea col. add. n 00h d out n d out n + 1 by/ry t chz t rhz t rhoh col. add. n t csd t cea
TC58NVG0S3ETA00 2011-03-01c 11 read cycle with data cache timing diagram (1/2) 30h pa8 to 15 pa0 to 7 ca8 to 11 ca0 to 7 i/o t dh t ds t wc t als t alh we cle ce ale re t dh t ds t dh t ds t dh t ds t dh t ds t alh t r t dh t ds t wb t als t rc t rr t rea column address n * 00h d out 0 d out 1 by/ry tcea page address m d out 31h t dh t ds t wb t dcbsyr1 31h t dh t ds t wb d out 0 t rr t rea t dcbsyr1 t clr t clr tcea page address m col. add. 0 col. add. 0 page address m + 1 t rw t cs t cls t clh t ch 1 continues to of next page 1 * the column address will be reset to 0 by the 31h command input. t cs t cls t clh t ch t cs t cls t clh t ch t cs t cls t clh t ch
TC58NVG0S3ETA00 2011-03-01c 12 read cycle with data cache timing diagram (2/2) continues from of last page 1 i/o we cle ce ale re by/ry d out t clr t wb 31h t dh t ds t wb 31h t dh t ds t rc t rr t rea page address m + 1 page address m + x t clr t wb t rc t rr t rea tcea 3fh t dh t ds d out 0 d out 1 d out t rc t rr t rea tcea page address m + 2 t dcbsyr1 t dcbsyr1 t dcbsyr1 t clr col. add. 0 col. add. 0 col. add. 0 tcea d out 0 d out 1 d out d out 0 d out 1 d out 1 t cs t cls t clh t ch t cs t cls t clh t ch t cs t cls t clh t ch make sure to terminate the operation with 3fh command.
TC58NVG0S3ETA00 2011-03-01c 13 column address change in read cycle timing diagram (1/2) t clr i/o t cs t cls t clh t ch t wc t als t alh t r cle ce ale re t dh t ds t dh t ds t alh t wb t cs t cls t clh t ch t als t rc t rea tcea t rr page address p page address p column address a 00h ca0 to 7 t dh t ds ca8 to 11 t dh t ds pa0 to 7 t dh t ds pa8 to 15 t dh t ds 30h d out a d out a + 1 d out a + n we 1 continues from of next page 1 by/ry
TC58NVG0S3ETA00 2011-03-01c 14 column address change in read cycle timing diagram (2/2) i/o t cs t cls t clh t ch 05h ca0 to 7 ca8 to 11 t wc t als t alh cle ce ale re t dh t ds t dh t ds t dh t ds column address b e0h t dh t ds t alh t cs t cls t clh t ch t als t rea d out a + n t rhw page address p column address b t rc t clr tcea t ir d out b + n? d out b + 1 d out b 1 continues from of last page 1 we by/ry t whr
TC58NVG0S3ETA00 2011-03-01c 15 data output timing diagram command i/o t rc t dh t rp t rp we cle ce ale re t rloh t reh t rea t rhz t rea t cs t cls t clh t ch t rp t rr t rea t rloh t ds by/ry t chz t rhoh t rhoh t cea dout dout t alh
TC58NVG0S3ETA00 2011-03-01c 16 auto-program operation timing diagram ca0 to 7 t cls t cls t als t ds t dh we cle ce ale re by/ry : v ih or v il t clh t ch t cs t ds t dh t alh i/o : do not input data while data is being output. t cs t dh t ds t dh t prog t wb t ds t alh t als * ) m: up to 2112 (byte input data for 8 device). column address n ca8 to 11 d in n d in m 10h 70h status output pa0 to 7 pa8 to 15 80h d in n+1
TC58NVG0S3ETA00 2011-03-01c 17 auto-program operation with data cache timing diagram (1/3) t cls t als t ds t dh 80h we cle ce ale re by/ry : v ih or v il t clh t ch t cs t cls t ds t dh t alh i/o : do not input data while data is being output. t cs t dh t ds t dh t dcbsyw2 d in n d in n+1 t wb 80h t ds 15h t alh t als d in 2111 1 continues to 1 of next page ca0 to ca11 is 0 in this diagram. ca0 to 7 ca0 to 7 ca8 to 11 pa0 to 7 pa8 to 15
TC58NVG0S3ETA00 2011-03-01c 18 auto-program operation with data cache timing diagram (2/3) : v ih or v il : do not input data while data is being output. t cls t als t ds t dh ca0 to 7 80h we cle ce ale re by/ry t clh t ch t cs t cls t ds t dh t alh i/o pa0 to 7 ca8 to 11 t cs 1 continued from 1 of last page t dh t ds t dh t dcbsyw2 d in n d in n+1 t wb 80h t ds 15h t alh t als d in 2111 2 pa8 to 15 ca0 to 7 repeat a max of 62 times (in order to program pages 1 to 62 of a block).
TC58NVG0S3ETA00 2011-03-01c 19 auto-program operation with data cache timing diagram (3/3) (note) make sure to terminate the op eration with 80h-10h- command sequence. if the operation is terminated by 80h-15h command sequence, monitor i/o 6 (ready / busy) by issuing status read command (70h) and make su re the previous page program operation is completed. if the page program operation is co mpleted issue ffh reset before next operation. 70h t cls t als t ds t dh we cle ce ale re by/ry : v ih or v il t clh t ch t cs t cls t ds t dh t alh i/o : do not input data while data is being output. t cs 2 t dh t ds t dh t prog ( * 1) t wb t ds t alh t als d in 2111 continued from 2 of last page ( * 1) t prog : since the last page programming by 10h command is initiated after the previous cache program, the t prog during cache programming is gi ven by the following equation. t prog = t prog of the last page + t prog of the previous page ? a a = (command input cycle + address input cycle + data input cycle time of the last page) if ?a? exceeds the t prog of previous page, t prog of the last page is t prog max. 80h ca0 to 7 ca8 to 11 pa0 to 7 pa8 to 15 d in n d in n + 1 10h status
TC58NVG0S3ETA00 2011-03-01c 20 multi-page program operation with data cache timing diagram (1/4) continues to 1 of next page t cls t als t ds t dh 80h we cle ce ale re by/ry : v ih or v il t clh t ch t cs t cls t ds t dh t alh i/o : do not input data while data is being output. t cs t dh t ds t dh t dcbsyw1 d in n d in n+1 t wb 81h t ds 11h t alh t als d in 2111 1 ca0 to 7 ca0 to 7 ca8 to 11 pa0 to 7 pa8 to 15 page address m district-0
TC58NVG0S3ETA00 2011-03-01c 21 multi-page program operation with data cache timing diagram (2/4) : v ih or v il : do not input data while data is being output. t cls t als t ds t dh ca0 to 7 81h we cle ce ale re by/ry t clh t ch t cs t cls t ds t dh t alh i/o pa0 to 7 ca8 to 11 t cs 1 continued from 1 of last page t dh t ds t dh t dcbsyw2 d in n d in n+1 t wb 80h t ds 15h t alh t als d in 2111 2 pa8 to 15 ca0 to 7 repeat a max of 63 times (in order to program pages 0 to 62 of a block). page address m district-1
TC58NVG0S3ETA00 2011-03-01c 22 multi-page program operation with data cache timing diagram (3/4) i/o t cls t als t ds t dh 80h we cle ce ale re by/ry : v ih or v il t clh t ch t cs t cls t ds t dh t alh : do not input data while data is being output. t cs t dh t ds t dh t dcbsyw1 d in n d in n+1 t wb 81h t ds 11h t alh t als d in 2111 3 continues to 3 of next page ca0 to 7 ca0 to 7 ca8 to 11 pa0 to 7 pa8 to 15 page address m+n district-0 2
TC58NVG0S3ETA00 2011-03-01c 23 multi-page program operation with data cache timing diagram (4/4) (note) make sure to terminate the operation with 80h-10h- command sequence. if the operation is terminated by 81h- 15h command sequence, monitor i/o 6 (r eady / busy) by issuing status read command (70h) and make sure the previous page program operation is completed. if the page program operation is completed issue ffh reset before next operation. ( * 1) t prog : since the last page programming by 10h command is initiated after the previous cache program, the t prog during cache programming is giv en by the following equation. t prog = t prog of the last page + t prog of the previous page ? a a = (command input cycle + address input cycle + data input cycle time of the last page) if ?a? exceeds the t prog of previous page, t prog of the last page is t prog max. 71h t cls t als t ds t dh we cle ce ale re by/ry : v ih or v il t clh t ch t cs t cls t ds t dh t alh i/o : do not input data while data is being output. t cs 3 t dh t ds t dh t prog ( * 1) t wb t ds t alh t als d in 2111 continued from 3 of last page 81h ca0 to 7 ca8 to 11 pa0 to 7 pa8 to 15 d in n + 1 10h status d in n page address m+n district-1
TC58NVG0S3ETA00 2011-03-01c 24 auto block erase timing diagram t cs 60h pa8 to 15 we cle ce ale re by/ry : v ih or v il t cls t clh t cls pa0 to 7 t ds t dh t als : do not input data while data is being output. auto block erase setup command i/o d0h 70h t wb t berase busy status read command erase start command status output t alh
TC58NVG0S3ETA00 2011-03-01c 25 multi block erase timing diagram 60h pa8 to 15 we cle ce ale re by/ry : v ih or v il t cs t cls t clh t cls pa0 to 7 t ds t dh t als : do not input data while data is being output. d0h 71h t wb t berase busy status read command auto block erase setup command i/o1 to status output t alh repeat 2 times (district-0,1)
TC58NVG0S3ETA00 2011-03-01c 26 id read operation timing diagram : v ih or v il we cle re t cea ce ale i/o t ar id read command address 00 maker code device code t rea t cls t cs t ds t ch t alh t als t cls t cs t ch t alh t dh 90h 00h 98h t rea d1h t rea t rea see table 5 see table 5 t rea see table 5
TC58NVG0S3ETA00 2011-03-01c 27 pin functions the device is a serial access memory which utiliz es time-sharing input of address information. command latch enable: cle the cle input signal is used to control loading of the operation mode command into the internal command register. the command is latched into the command regi ster from the i/o port on the rising edge of the we signal while cle is high. address latch enable: ale the ale signal is used to control loading address in formation into the internal address register. address information is latched into the address register from the i/o port on the rising edge of we while ale is high. chip enable: the device goes into a low-power standby mode when ce goes high during the device is in ready state. the ce signal is ignored when device is in busy state ( by/ry = l), such as during a program or erase or read operation, and will not enter standby mode even if the ce input goes high. write enable: the we signal is used to control the acqu isition of data from the i/o port. read enable: the re signal controls serial data output. data is available t rea after the falling edge of re . the internal column address counter is also increme nted (address = address + l) on this falling edge. i/o port: i/o1 to 8 the i/o1 to 8 pins are used as a port for transferring address, command and input/ output data to and from the device. write protect: the wp signal is used to protect the de vice from accidental programming or erasing. the internal voltage regulator is reset when wp is low. this signal is usua lly used for protecting the data during the power-on/off sequence when input signals are invalid. ready/busy: the by/ry output signal is used to indicate th e operating condition of the device. the by/ry signal is in busy state ( by/ry = l) during the program, erase and read operations and will return to ready state ( by/ry = h) after completion of the operation. the output buff er for this signal is an open drain and has to be pulled-up to vccq with an appropriate resister. if by/ry signal is not pulled-up to vccq( ?open? state ), device operation can not guarantee. ce we re wp by/ry
TC58NVG0S3ETA00 2011-03-01c 28 schematic cell layout and address assignment the program operation works on page units wh ile the erase operation works on block units. a page consists of 2112 bytes in which 2048 bytes are used for main memory storage and 64 bytes are for redundancy or for other uses. 1 page = 2112 bytes 1 block = 2112 bytes 64 pages = (128k + 4k) bytes capacity = 2112 bytes 64pages 1024 blocks an address is read in via the i/o port over four consecutive clock cycles, as shown in table 1. table 1. addressing i/o8 i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 first cycle ca7 ca6 ca5 ca4 ca3 ca2 ca1 ca0 second cycle l l l l ca11 ca10 ca9 ca8 third cycle pa7 pa6 pa5 pa4 pa3 pa2 pa1 pa0 ca0 to ca11: column address pa0 to pa15: page address pa6 to pa15: block address pa0 to pa5: nand address in block fourth cycle pa15 pa14 pa13 pa12 pa11 pa10 pa9 pa8 2112 65536 pages 1024 blocks 2048 2048 64 64 page buffe r data cache i/o8 i/o1 64 pages = 1 block 8i/o
TC58NVG0S3ETA00 2011-03-01c 29 operation mode: logic and command tables the operation modes such as program, erase, read and reset are controlled by command operations shown in table 3. address input, comma nd input and data input/output are controlled by the cle, ale, ce , we , re and wp signals, as shown in table 2. table 2. logic table cle ale ce we re wp * 1 command input h l l h * data input l l l h h address input l h l h * serial data output l l l h * during program (busy) * * * * * h during erase (busy) * * * * * h * * h * * * during read (busy) * * l h ( * 2) h ( * 2) * program, erase inhibit * * * * * l standby * * h * * 0 v/v cc h: v ih , l: v il , * : v ih or v il * 1: refer to application note (10) toward the end of this document regarding the wp signal when program or erase inhibit * 2: if ce is low during read busy, we and re must be held high to avoid unintended command/address input to the device or read to device. reset or status read command can be input during read busy.
TC58NVG0S3ETA00 2011-03-01c 30 table 3. command table (hex) first cycle second cycle acceptable while busy serial data input 80 ? read 00 30 column address change in serial data output 05 e0 read with data cache 31 ? read start for last page in read cycle with data cache 3f ? auto page program 80 10 column address change in serial data input 85 ? auto program with data cache 80 15 80 11 81 15 multi page program 81 10 read for page copy (2) with data out 00 3a auto program with data cache during page copy (2) 8c 15 auto program for last page during page copy (2) 8c 10 auto block erase 60 d0 id read 90 ? status read 70 ? { status read for multi-page program or multi block erase 71 ? { reset ff ? { table 4. read mode operation states cle ale ce we re i/o1 to i/o8 power output select l l l h l data output active output deselect l l l h h high impedance active h: v ih , l: v il hex data bit assignment (example) 1 0 0 0 0 0 0 0 8765432i/o1 serial data input: 80h
TC58NVG0S3ETA00 2011-03-01c 31 device operation read mode read mode is set when the "00h" and ?30h? commands are issued to th e command register. between the two commands, a start address for the read mode needs to be issued. refer to the figures below for the sequence and the block diagram (refer to the detailed timing chart.). random column address change in read cycle a data transfer operation from the cell array to the data cache via page buffer starts on the rising edge of we in the 30h command input cycle (after the address information has been latched). the device will be in the busy state during this transfer period. after the transfer period, the device returns to ready state. serial data can be output synchronously with the re clock from the start address designated in the address input cycle. cell array select page n m m data cache page buffer i/o1 to 8: m = 2111 select page n m m? during the serial data output from the data cache, the column address can be changed by inputting a new column address using the 05h and e0h commands. the data is read out in serial starting at the new column address. random column address change operation can be done multiple times within the same page. by/ry we cle re 00h ce ale i/o busy 30h page address n column address m m m+1 m+2 page address n t r start-address input start-address input by/ry we cle 00h ce ale i/o col. m page n busy page n 30h 05h e0h col. m? m m + 1 m? m? + 1 m? + 2 m? + 3m? + 4 page n col. m start from col. m start from col. m? t r m + 2m + 3 re
TC58NVG0S3ETA00 2011-03-01c 32 read operation with read cache the device has a read operation with data cache that enables the high speed read oper ation shown below. when the block address changes, this sequence has to be started from the beginning. page n + 2 if the 31h command is issued to the device, the data content of the next page is transferred to the page buffer during serial d ata out from the data cache, and therefore the tr (data transfer from memory cell to data register) will be reduced. 1 normal read. data is transferred from page n to data cache th rough page buffer. during this time period, the device outputs b usy state for tr max. 2 after the ready/busy returns to ready, 31h command is issued a nd data is transferred to data cache from page buffer again. th is data transfer takes tdcbsyr1 max and the completion of this time period can be detected by ready/busy signal. 3 data of page n + 1 is transferred to page buffer from cell while the data of p age n in data cache can be read out by /re clock simultaneously. 4 the 31h command makes data of page n + 1 transfer to data cache from page buffer after the completion of the transfer from cell to page buffer. the device outputs bu sy state for tdcbsyr1 max.. this busy period depends on the combination of the internal dat a transfer time from cell to page buffer and the serial data out time. 5 data of page n + 2 is transferred to page buffer from cell while the data of page n + 1 in data cache can be read out by /re clock simultaneously 6 the 3fh command makes the data of page n + 2 transfer to the data cache from the page buffer after the completion of the transfer from cell to page buffer. the device ou tputs busy state for tdcbsyr1 max.. this busy period depends on the combination of the internal data transfer time from cell to page buffer and the serial data out time. 7 data of page n + 2 in data cache can be read out, but since the 3fh command does not transfer the data from the memory cell to page buffer, the device can accept new command input immediately after the completion of serial data out. data cache page buffer cell array 1 2 3 3 4 5 5 1 6 7 page n page n page n + 1 page n 30h 31h & re clock page n + 1 page n + 2 page n + 1 31h & re clock page n + 2 3fh & re clock by/ry we cle 00h ce ale i/o t r 30h col. m page n 0 1 23 31h 31h 0 1 23 page address n column 0 2111 page address n + 1 2111 0 1 23 page address n + 2 2111 3fh 1 2 4 3 5 6 7 t dcbsyr1 t dcbsyr1 t dcbsyr1 re
TC58NVG0S3ETA00 2011-03-01c 33 multi page read operation the device has a multi page read operation and multi page read with data cache operation. (1) multi page read without data cache the sequence of command and a ddress input is shown below. same page address (pa0 to pa5) within each district has to be selected. the data transfer operation from the cell array to th e data cache via page buffer starts on the rising edge of we in the 30h command input cycle (after the 2 districts address information has been latched). the device will be in the busy state during this transfer period. after the transfer period, the device returns to re ady state. serial data can be output synchronously with the re clock from the start address designated in the address input cycle. selected page reading district 0 district 1 selected page by/ry 60 command input page address pa0 to pa15 (district 0) tr address input 60 page address pa0 to pa15 (district 1) address input 30 a a by/ry 00 command input column + page address ca0 to ca11, pa0 to pa15 (district 0) address input 05 column address ca0 to ca11 (district 0) address input e0 b b a a data output by/ry 00 command input column + page address ca0 to ca11, pa0 to pa15 (district 1) address input 05 column address ca0 to ca11 (district 1) address input e0 b b data output (district 0) (district 1) (2 cycle) (2 cycle) (4 cycle) (4 cycle) (2 cycle) (2 cycle)
TC58NVG0S3ETA00 2011-03-01c 34 (2) multi page read with data cache when the block address changes (increments) this sequenced has to be started from the beginning. the sequence of command and a ddress input is shown below. same page address (pa0 to pa5) within each district has to be selected. by/ry 60 command input page address pa0 to pa15 (page m0 ; district 0) tr address input 60 page address pa0 to pa15 (page n0 ; district 1) address input 30 a a by/ry 00 command input column + page address ca0 to ca11, pa0 to pa15 (page m0 ; district 0) address input 05 column address ca0 to ca11 (district 0) address input e0 b a a data output by/ry 00 command input column + page address ca0 to ca11, pa0 to pa15 (page n0 ; district 1) address input 05 column address ca0 to ca11 (district 1) address input e0 b b data output (district 0) (district 1) 31 c c by/ry 00 command input column + page address ca0 to ca11, pa0 to pa15 (page m63 ; district 0) address input 05 column address ca0 to ca11 (district 0) address input e0 d c c data output by/ry 00 command input column + page address ca0 to ca11, pa0 to pa15 (page n63 ; district 1) address input 05 column address ca0 to ca11 (district 1) address input e0 d d data output (district 0) (district 1) 3f b return to a re p eat a max of 63 times tdcbsyr1 tdcbsyr1 d
TC58NVG0S3ETA00 2011-03-01c 35 (3) notes (a) internal addressing in relation with the districts to use multi page read operation, the internal addressing should be considered in relation with the district. ? the device consists from 2 districts. ? each district consists from 512 erase blocks. ? the allocation rule is follows. district 0: block 0, block 2, block 4, block 6,, block 1022 district 1: block 1, block 3, block 5, block 7,, block 1023 (b) address input restriction for the multi page read operation there are following restrictions in using multi page read; (restriction) maximum one block should be se lected from each district. same page address (pa0 to pa5) within two districts has to be selected. for example; (60) [district 0, page address 0x0000] (60) [district 1, page address 0x0040] (30) (60) [district 0, page address 0x0001] (60) [district 1, page address 0x0041] (30) (acceptance) there is no order limitation of th e district for the address input. for example, following operation is accepted; (60) [district 0] (60) [district 1] (30) (60) [district 1] (60) [district 0] (30) it requires no mutual address relation betw een the selected blocks from each district. (c) wp signal make sure wp is held to high level when multi page read operation is performed
TC58NVG0S3ETA00 2011-03-01c 36 auto page program operation the device carries out an automatic page program operation when it receives a "10h" program command after the address and data have been input. the sequence of command, address and data input is shown below. (refer to the detailed timing chart.) by/ry random column address change in auto page program operation the column address can be changed by the 85h command duri ng the data input sequence of the auto page program operation. two address input cycles after the 85h command are recognized as a new column address for the data input. after the new data is input to the new column address, the 10h command initiates the actual data program into the selected page automatically. the random column address ch ange operation can be repeated multiple times within the same page. the data is transferred (programmed) from the data cache via the page buffer to the selected page on the rising edge of we following input of the ?10h? command. after programming, the programmed data is transferred back to the page buffer to be automatically verified by the device. if the programming does not succeed, the program/verify operation is repeated by the device until success is achieved or until the maximum loop number set in the device is reached. selected page program data input read& verification cle 80h ale i/o page p ce we col. m din 10h 70h din din din data status out re data input selected page readin g & verification program col. m col. m? 80h page n col. m 85h din din 10h status din din din din col. m? din din 70h 90h
TC58NVG0S3ETA00 2011-03-01c 37 multi page program the device has a multi page program, which enables even higher speed program operation compared to auto page program. the seque nce of command, address and data input is shown bellow. (refer to the detailed timing chart.) although two planes are programmed simultaneously, pass/fail is not available for each page wh en the program operation complete s. status bit of i/o 0 is set to ?1? when any of the pages fails. limitation in addressi ng with multi page program is shown below. multi page program note: any command between 11h and 81h is prohibited except 70h and ffh. data input 80h 11h plane 0 (512 block) block 0 block 2 block 1020 block 1022 81h 10h plane 1 (512 block) block 1 block 3 block 1021 block 1023 i/o0~7 r/ b i/o0 pass fail ?1? ?0? tdcbsyw1 tprog ca0~ca11 : valid pa0~pa5 : valid? pa6 : district0? pa7~pa15 : valid? 80h address & data input 11h ca0~ca11 : valid pa0~pa5 : valid pa6 : district1 pa7~pa15 : valid 81h address & data input 10h 70h note
TC58NVG0S3ETA00 2011-03-01c 38 auto page program operation with data cache the device has an auto page program with data cache operation enabling the high speed program operat ion shown below. when the b lock address changes this sequenced has to be started from the beginning. data cache page buffer cell array page n + p 1 2 3 4 5 5 6 page n page n + 1 data for page n + p 3 data for page n data for page n data for page n + 1 data for page n + 1 page n + p ? 1 issuing the 15h command to the device after serial data input initiates the program operation with data cache 1 data for page n is input to data cache. 2 data is transferred to the page buffer by the 15h command. during the transfer the ready/busy outputs busy state (t dcbsyw2 ). 3 data is programmed to the selected page while the data for page n + 1 is input to the data cache. 4 by the 15h command, the data in the data cache is transferred to the page buffer after the programming of page n is completed . the device output busy state from the 15h command until the data cache becomes empty. the duration of this peri od depends on timing between the internal programming of page n and serial data input for page n + 1 (t dcbsyw2 ). 5 data for page n + p is input to the data cache while the data of the page n + p ? 1 is being programmed. 6 the programming with data cache is terminated by the 10h command. when the device becomes ready, it shows that the internal p rogramming of the page + p is completed. note: since the last page programming by the 10h command is initia ted after the previous cache program, the tprog during cache programming is given by the following; t prog = t prog for the last page + t prog of the previous page ? ( command input cycle + address input cycle + data input cycle time of the previous page) by/ry cle ale i/o ce we page n 80h a dd a dd status output din 15h 70h din din page n + 1 80h a dd a dd a dd 1 status output din 15h 70h din din page n + p 80h a dd a dd a dd 3 4 status output din 10h 70h din din 5 6 a dd a dd a dd t dcbsyw2 t dcbsyw2 t prog (note) re 2
TC58NVG0S3ETA00 2011-03-01c 39 pass/fail status for each page programmed by the auto page programming with data cache operation can be detected by the status read operation. z i/o1 : pass/fail of the curr ent page program operation. z i/o2 : pass/fail of the previous page program operation. the pass/fail status on i/o1 and i/o2 ar e valid under the following conditions. z status on i/o1: page buffer ready/busy is ready state. the page buffer ready/busy is output on i/o6 by status read operation or by/ry pin after the 10h command z status on i/o2: data cache read/busy is ready state. the data cache ready/busy is output on i/o7 by status read operation or by/ry pin after the 15h command. 80h?15h 70h status out page 1 data cache busy page buffer busy page 1 page 2 70h 70h page 2 70h 80h?15h page n ? 1 80h?10h page n page n ? 1 page n 70h 80h?15h i/o2 => i/o1 => invalid invalid page 1 invalid page n ? 2 invalid invalid invalid page n ? 1 page n page 1 page 2 70h if the page buffer busy returns to ready before the next 80h command input, and if status read is done during this ready period, the status read provides pass/fail fo r page 2 on i/o1 and pass/fail result for page1 on i/o2 status out status out status out status out status out example) byry/ pin
TC58NVG0S3ETA00 2011-03-01c 40 multi page program with data cache the device has a multi page program with data cache operation, which enables ev en higher speed program operation compared to auto page program with data cache as shown below. when the block address changes (increments) this sequenced has to be started from the beginning. the sequence of command, address an d data input is shown below. (refer to the detailed timing chart.) after ?15h? or ?10h? program command is input to device , physical programing star ts as follows. for details of auto program with data cache, refer to ?auto page progra m with data cache?. the data is transferred (programmed) from the page buffer to the selected page on the rising edge of /we following input of the ?15h? or ?10h? command. after programming, the programmed data is transferred back to the register to be automatically verified by the device. if the programming does not succeed, the program/verify operation is repeated by the device until success is achieved or until the maximum loop number set in the device is reached. selected page reading & verification program district 0 district 1 by/ry data input command for multi-page program data input 0 to 2111 15 81 80 11 10 81 80 11 data input command address input (district 0) data input 0 to 2111 dummy program command data input command data input 0 to 2111 address input (district 1) program with data cache command address input (district 0) dummy program command auto page program command data input 0 to 2111 address input (district1) data input command for multi-page program
TC58NVG0S3ETA00 2011-03-01c 41 starting the above operation from 1st page of the se lected erase blocks, and th en repeating the operation total 64 times with incrementing the page address in the blocks, and then input the last page data of the blocks, ?10h? command executes fi nal programming. make sure to terminate with 81h-10h- command sequence. in this full sequence, the co mmand sequence is following. after the ?15h? or ?10h? command, the results of the above operation is shown through the ?71h?status read command. the 71h command status description is as below. status output i/o1 chip status1 : pass/fail pass: 0 fail: 1 i/o2 district 0 chip status1 : pass/fail pass: 0 fail: 1 i/o3 district 1 chip status1 : pass/fail pass: 0 fail: 1 i/o4 district 0 chip status2 : pass/fail pass: 0 fail: 1 i/o5 district 1 chip status2 : pass/fail pass: 0 fail: 1 i/o6 ready/busy ready: 1 busy: 0 i/o7 data cache ready/busy ready: 1 busy: 0 i/o8 write protect protect: 0 not protect: 1 i/o1 describes pass/fail condition of district 0 and 1(or data of i/o2 and i/o3). if one of the districts fails during multi page program operation, it shows ?fail?. i/o2 to 5 shows the pass/fail condition of each district. for deta ils on ?chip status1? and ?chip status2?, refer to section ?status read?. 10 or15 71 pass i/o status read command fail by/ry 15 15 10 15 81 81 81 81 11 11 11 11 80 80 80 80 1st 63th 64th
TC58NVG0S3ETA00 2011-03-01c 42 internal addressing in relation with the districts to use multi page program operation, the internal addressing should be considered in relation with the district. ? the device consists from 2 districts. ? each district consists from 512 erase blocks. ? the allocation rule is follows. district 0: block 0, block 2, block 4, block 6,, block 1022 district 1: block 1, block 3, block 5, block 7,, block 1023 address input restriction for the multi page program with data cache operation there are following restrictions in using multi page program with data cache; (restriction) maximum one block should be se lected from each district. same page address (pa0 to pa5) within two districts has to be selected. for example; (80) [district 0, page address 0x0000] (11) (81) [district 1, page address 0x0040] (15 or 10) (80) [district 0, page address 0x0001] (11) (81) [district 1, page address 0x0041] (15 or 10) (acceptance) there is no order limitation of th e district for the address input. for example, following operation is accepted; (80) [district 0] (11) (81) [district 1] (15 or 10) (80) [district 1] (11) (81) [district 0] (15 or 10) it requires no mutual address relation betw een the selected blocks from each district. operating restriction during the multi page program with data cache operation (restriction) the operation has to be terminated with ?10h? command. once the operation is started, no commands other than the commands shown in the timing diagram is allowed to be input except for status read command and reset command.
TC58NVG0S3ETA00 2011-03-01c 43 page copy (2) by using page copy (2), data in a page can be copied to another page after the data has been read out. when the block address changes (increments) this sequenced has to be started from the beginning. page copy (2) operation is as following. 1 data for page n is transferred to the data cache. 2 data for page n is read out. 3 copy page address m is input and if the data needs to be changed, changed data is input. 4 data cache for page m is transferred to the page buffer. 5 after the ready state, data for page n + p1 is output from the data cache while the data of page m is being programmed. when changing data, changed data is input. 1 3 4 5 2 t r t dcbsyw2 t dcbsyr2 byry/ 00 command input address ca0 to ca11, pa0 to pa15 (page n) address input 30 address input 8c a data input 15 00 address input 3a data output address ca0 to ca11, pa0 to pa15 (page m) address ca0 to ca11, pa0 to pa15 (page n+p1) a data output col = 0 start col = 0 start data cache page buffer cell array 1 2 3 4 5 page n data for page n data for page n page m page n + p1 data for page n + p1 data for page m
TC58NVG0S3ETA00 2011-03-01c 44 6 copy page address (m + r1) is input and if the data needs to be changed, changed data is input. 7 after programming of page m is completed, data cache for page m + r1 is transferred to the page buffer. 8 by the 15h command, the data in the page buffer is programmed to page m + r1. data for page n + p2 is transferred to the data cache. 9 the data in the page buffer is programmed to page m + rn ? 1. data for page n + pn is transferred to the data cache. by/ry 8 9 6 7 t dcbsyw2 t dcbsyr2 t dcbsyr2 when changing data, changed data is input. command input address ca0 to ca11, pa0 to pa15 (page m+r1) b 00 address input 3a data output address input 8c data input 15 00 address input 3a data output address ca0 to ca11, pa0 to pa15 (page n+p2) address ca0 to ca11, pa0 to pa15 (page n+pn) a b a col = 0 start col = 0 start data cache page buffer cell array 6 7 8 page m data for page m + r1 data for pa g e m + r1 data for page n + p2 data for page n + pn page m + r1 page n + p2 page n + p1 page m + rn ? 1 page n + pn page m + rn ? 1 9
TC58NVG0S3ETA00 2011-03-01c 45 10 copy page address (m + rn) is input and if the data needs to be changed, changed data is input. 11 by issuing the 10h command, the data in the page buffer is programmed to page m + rn. (*1) since the last page programming by the 10h command is initiated after the previous cache program, the t prog here will be expected as the following, t prog = t prog of the last page + tprog of the previous page ? ( command input cycle + address input cycle + data output/input cycle time of the last page) note) this operation needs to be execut ed within district-0 or district-1. data input is required only if previous data output needs to be altered. if the data has to be changed, locate the desired address with the column and page address input after the 8ch command, and cha nge only the data that needs be changed. if the data does not have to be changed, data input cycles are not required. make sure wp is held to high level when page copy (2) operation is performed. also make sure the page copy operation is terminated with 8ch-10h command sequence data cache page buffer cell array page m + rn ? 1 data for page m + rn data for page m + rn page n + pn 10 11 by/ry 10 11 t prog (*1) command input address ca0 to ca11, pa0 to pa15 (page m+rn) address input 8c data input 10 70 status output b b
TC58NVG0S3ETA00 2011-03-01c 46 multi page copy (2) by using multi page copy (2), data in two pages can be copied to another pa ges after the data has been read out. when the each block addre ss changes (increments) this sequenced has to be started from the beginning. same page address (pa0 to pa5) within two districts has to be selected. t r byry/ 60 command input address pa0 to pa15 (page m0 ; district 0) address input 30 a 00 address input e0 data output address ca0 to ca11, pa0 to pa15 (page m0) a 60 address input address pa0 to pa15 (page n0 ; district 1) 05 address input address ca0 to ca11 (col = 0) t dcbsyw1 00 address input 05 address input e0 b b data output address ca0 to ca11, pa0 to pa15 (page n0) address ca0 to ca11 (col = 0) 8c address input 11 data input address ca0 to ca11, pa0 to pa15 (page m0 ; district 0) byry/ a a 00 address input 05 address input e0 data output address ca0 to ca11, pa0 to pa15 (page m1) address ca0 to ca11 (col = 0) byry/ 00 address input 05 address input e0 data output address ca0 to ca11, pa0 to pa15 (page n1) address ca0 to ca11 (col = 0) d d c c t dcbsyw2 8c address input 15 data input address ca0 to ca11, pa0 to pa15 (page n0 ; district 1) byry/ 60 address pa0 to pa15 (page m1 ; district 0) address input 3a 60 address input address pa0 to pa15 (page n1 ; district 1) c c b b t dcbsyr2
TC58NVG0S3ETA00 2011-03-01c 47 t dcbsyw1 00 address input 05 address input e0 g g data output address ca0 to ca11, pa0 to pa15 (page n63) address ca0 to ca11 (col = 0) 8c address input 11 data input address ca0 to ca11, pa0 to pa15 (page m63 ; district 0) byry/ f f t dcbsyr2 byry/ 60 address pa0 to pa15 (page m63 ; district 0) address input 3a f 00 address input e0 data output address ca0 to ca11, pa0 to pa15 (page m63) f 60 address input address pa0 to pa15 (page n63 ; district 1) 05 address input address ca0 to ca11 (col = 0) e e t dcbsyw1 8c address input 11 data input address ca0 to ca11, pa0 to pa15 (page m1 ; district 0) byry/ e e d d 8c address input 15 data input address ca0 to ca11, pa0 to pa15 (page n1 ; district 1) t dcbsyw2 byry/ g g 8c address input 10 data input address ca0 to ca11, pa0 to pa15 (page n63 ; district 1) tprog ( *1 ) note) this operation needs to be ex ecuted within each district. data input is required only if previous data output needs to be altered. if the data has to be changed, locate the desired addr ess with the column and page address input after the 8ch command, and change only the data that needs be changed. if the data does not have to be changed, data input cycles are not required. make sure wp is held to high level when multi page copy (2) operation is performed. also make sure the multi page copy operation is terminated with 8ch-10h command sequence ( * 1) t prog : since the last page programming by 10h comm and is initiated after the previous cache program, the t prog* during cache programming is given by the following equation. t prog = t prog of the last page + t prog of the previous page-a a = (command input cycle + address input cycle + data output/input cycle time of the last page) if ?a? exceeds the t prog of previous page, t prog of the last page is t prog max.
TC58NVG0S3ETA00 2011-03-01c 48 auto block erase the auto block erase operation st arts on the rising edge of we after the erase start command ?d0h? which follows the erase setup command ?60h?. this two-cycle process for erase oper ations acts as an extra layer of protection from accidental erasure of data due to external noise. the de vice automatically executes the erase and verify operations. multi block erase the multi block erase operation starts by selecting two block addresses before d0h command as in below diagram. the device automatically executes the erase and verify operations and the result can be monitored by checking the status by 71h status read command. for details on 71h status read command, refer to section ?multi page program with data cache?. internal addressing in relation with the districts to use multi block erase operation, the internal addressing should be consider ed in relation with the district. ? the device consists from 2 districts. ? each district consists from 512 erase blocks. ? the allocation rule is follows. district 0: block 0, block 2, block 4, block 6,, block 1022 district 1: block 1, block 3, block 5, block 7,, block 1023 address input restriction for the multi block erase there are following restrictions in using multi block erase (restriction) maximum one block should be se lected from each district. for example; (60) [district 0] (60) [district 1] (d0) (acceptance) there is no order limitation of th e district for the address input. for example, following operation is accepted; (60) [district 1] (60) [district 0] (d0) it requires no mutual address relation betw een the selected blocks from each district. make sure to terminate the operation with d0h command. if the operation needs to be terminated before d0h command input, input the ffh reset command to terminate the operation. pass i/o fail by/ry 60 d0 70 block address input: 2 cycles status read command busy erase start command pass i/o fail by/ry 60 d0 71 block address input: 2 cycles district 0 status read command busy erase start command 60 block address input: 2 cycles district 1
TC58NVG0S3ETA00 2011-03-01c 49 id read the device contains id codes which can be used to iden tify the device type, the ma nufacturer, and features of the device. the id codes can be read out under the following timing conditions: table 5. code table description i/o8 i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 hex data 1st data maker code 1 0 0 1 1 0 0 0 98h 2nd data device code 1 1 0 1 0 0 0 1 d1h 3rd data chip number, cell type ? ? ? ? ? ? ? ? see table 4th data page size, block size, ? ? ? ? ? ? ? ? see table 5th data plane number ? ? ? ? ? ? ? ? see table 3rd data description i/o8 i/o7 i/o 6 i/o5 i/o4 i/o3 i/o2 i/o1 internal chip number 1 2 4 8 0 0 1 1 0 1 0 1 cell type 2 level cell 4 level cell 8 level cell 16 level cell 0 0 1 1 0 1 0 1 00h 98h d1h see table 5 see table 5 we cle re t cea ce ale i/o t ar t rea id read command address 00 maker code device code see table 5
TC58NVG0S3ETA00 2011-03-01c 50 4th data description i/o8 i/o7 i/o 6 i/o5 i/o4 i/o3 i/o2 i/o1 page size (without redundant area) 1 kb 2 kb 4 kb 8 kb 0 0 1 1 0 1 0 1 block size (without redundant area) 64 kb 128 kb 256 kb 512 kb 0 0 1 1 0 1 0 1 5th data description i/o8 i/o7 i/o 6 i/o5 i/o4 i/o3 i/o2 i/o1 plane number 1 plane 2 plane 4 plane 8 plane 0 0 1 1 0 1 0 1
TC58NVG0S3ETA00 2011-03-01c 51 status read the device automatically implements the execution and verification of the program and erase operations. the status read function is used to monitor the ready/ busy status of the device, determine the result (pass /fail) of a program or erase operation, and determine whether the device is in protect mode. the device status is output via the i/o port using re after a ?70h? command input. the status read can also be used during a read operation to find out the ready/busy status. the resulting information is outlined in table 6. table 6. status output table definition page program block erase cache program read cache read i/o1 chip status1 pass: 0 fail: 1 pass/fail pass/fail invalid i/o2 chip status 2 pass: 0 fail: 1 invalid pass/fail invalid i/o3 not used 0 0 0 i/o4 not used 0 0 0 i/o5 not used 0 0 0 i/o6 page buffer ready/busy ready: 1 busy: 0 ready/busy ready/busy ready/busy i/o7 data cache ready/busy ready: 1 busy: 0 ready/busy ready/busy ready/busy i/o8 write protect not protected :1 protected: 0 write protect write protect write protect the pass/fail status on i/o1 and i/o2 is only valid during a program/erase operation when the device is in the ready state. chip status 1: during a auto page program or auto block erase operation this bit indicates the pass/fail result. during a auto page programming with data cache op eration, this bit shows the pass/fail results of the current page program operation, and therefore this bit is only valid when i/o6 shows the ready state. chip status 2: this bit shows the pass/fail result of the previous page program operat ion during auto page programming with data cache. this status is va lid when i/o7 shows the ready state. the status output on the i/o6 is th e same as that of i/o7 if the comma nd input just before the 70h is not 15h or 31h.
TC58NVG0S3ETA00 2011-03-01c 52 an application example with multiple de vices is shown in the figure below. system design note: if the by/ry pin signals from multiple devices are wired together as shown in the diagram, the status read function can be used to determine the status of each individual device. reset the reset mode stops all operations. for example, in case of a program or erase operation, the internally generated voltage is discharged to 0 volt and the device enters the wait state. reset during a cache program/page copy may not just stop the most recent page program but it may also stop the previous program to a page de pending on when the ff reset is input. the response to a ?ffh? reset co mmand input during the various device operations is as follows: when a reset (ffh) command is input during programming internal v pp 80 10 ff 00 by/ry t rst (max 10 s) device 1 cle 1ce device 2 2ce device 3 3ce device n nce device n + 1 1nce + ale we re by/ry we re status on device 1 70h 1ce ale i/o 70h status on device n by/ry cle nce busy i/o1 to i/o8
TC58NVG0S3ETA00 2011-03-01c 53 when a reset (ffh) command is input during erasing when a reset (ffh) command is input during read operation when a reset (ffh) command is input during ready when a status read command (70h) is input after a reset when two or more reset commands are input in succession 10 by/ry ff ff (3) (2) (1) the second command is invalid, but the third command is valid. ff ff ff i/o status : pass/fail pass : ready/busy ready ff 70 by/ry 00 ff 00 by/ry t rst (max 6 s) 30 internal erase voltage d0 ff 00 by/ry t rst (max 500 s) 00 by/ry t rst (max 6 s) ff
TC58NVG0S3ETA00 2011-03-01c 54 application notes and comments (1) power-on/off sequence: the timing sequence shown in the figure below is necessary for the power-on/off sequence. the device internal initialization starts after the powe r supply reaches an appropriate level in the power on sequence. during the initialization th e device ready/busy signal indicates the busy state as shown in the figure below. in this time period, the acceptable commands are ffh or 70h. the wp signal is useful for protecting against data corruption at power-on/off. (2) power-on reset the following sequence is necessary because some input signals may not be stable at power-on. (3) prohibition of unspecified commands the operation commands are listed in t able 3. input of a command other th an those specified in table 3 is prohibited. stored data may be co rrupted if an unknown command is entered during the command cycle. (4) restriction of commands while in the busy state during the busy state, do not input any command except 70h(71h) and ffh. v il operation 0 v v cc 2.7 v 2.5v v il don?t care don?t care v ih ce , we , re wp cle, ale invalid don?t care ready/busy 1 ms max 100 s max ff reset power on
TC58NVG0S3ETA00 2011-03-01c 55 (5) acceptable commands after serial input command ?80h? once the serial input command ?80h ? has been input, do not input an y command other than the column address change in serial data input command ?85h?, auto program command ?10h?, multi page program command ?11h?, auto program with data cache command ?15h?, or the reset command ?ffh?. if a command other than ?85h? , ?10h? , ?11h? , ?15h ? or ?ffh? is input, the program operation is not performed and the device operation is set to the mode which the input command specifies. (6) addressing for program operation within a block, the pages must be programmed consecut ively from the lsb (least significant bit) page of the block to msb (most significant bit) page of the bl ock. random page address programming is prohibited. command other than ?85h?, ?10h?, ?11h?, ?15h? or ?ffh? 80 programming cannot be executed. 10 xx mode specified by the command. we by/ry 80 ff address input data in: data (1) page 0 data register page 2 page 1 page 31 page 63 (1) (2) (3) (32) (64) data (64) from the lsb page to msb page data in: data (1) page 0 data register page 2 page 1 page 31 page 63 (2) (32) (3) (1) (64) data (64) ex.) random page program (prohibition)
TC58NVG0S3ETA00 2011-03-01c 56 (7) status read during a read operation the device status can be read out by inputting the status read command ?70h? in read mode. once the device has been set to status read mode by a ?70h ? command, the device will not return to read mode unless the read command ?00h? is inputted during [a]. if the read command ?00h? is inputted during [a], status read mode is reset, and the device returns to read mode. in this ca se, data output starts automatically from address n and address input is unnecessary (8) auto programming failure (9) by/ry : termination for the ready/busy pin ( by/ry ) a pull-up resistor needs to be used for termination because the by/ry buffer consists of an open drain circuit. fail 80 10 80 10 address m data input 70 i/o address n data input if the programming result for page address m is fail, do not try to program the page to address n in another block without the data input sequence. because the previous input data has been lost, the same input sequence of 80h command, address and data is necessary. 10 80 m n this data may vary fr om device to device. we recommend that you use this data as a reference when selecting a resistor value. v cc v cc device v ss r by/ry c l 1.5 s 1.0 s 0.5 s 0 1 k ? 4 k ? 3 k ? 2 k ? 15 ns 10 ns 5 ns t f t r r t r t f v cc = 3.3 v ta = 25c c l = 100 pf t f ready v cc t r busy 00 address n command ce we by/ry re [a] status read command input status read status output . 70 00 30
TC58NVG0S3ETA00 2011-03-01c 57 (10) note regarding the wp signal the erase and program operations are automatically reset when wp goes low. the operations are enabled and disabled as follows: enable programming disable programming enable erasing disable erasing wp t ww (100 ns min) 80 10 we by/ry din wp t ww (100 ns min) 60 d0 we by/ry din wp t ww (100 ns min) 80 10 we by/ry din wp t ww (100 ns min) 60 d0 we by/ry din
TC58NVG0S3ETA00 2011-03-01c 58 (11) when five address cycles are input although the device may read in a fifth address, it is ignored inside the chip. read operation program operation cle ce we ale i/o address input ignored 80h data input cle address input 00h ce we ale i/o by/ry ignored 30h
TC58NVG0S3ETA00 2011-03-01c 59 (12) several programming cycles on the same page (partial page program) each segment can be programme d individually as follows: data pattern 4 data pattern 1 all 1 s all 1 s all 1 s all 1 s 1st programming 2nd programming 4th programming result data pattern 1 data pattern 2 data pattern 4 data pattern 2
TC58NVG0S3ETA00 2011-03-01c 60 (13) invalid blocks (bad blocks) the device occasionally contains unusable blocks. therefore, the following issues must be recognized: please do not perform an erase op eration to bad blocks. it may be impossible to recover the bad block information if the information is erased. check if the device has any bad blocks after installation into the system. refer to the test flow for bad block detection. bad blocks which are detected by the test flow must be managed as unusable blocks by the system. a bad block does not affect the perfor mance of good blocks because it is isolated from the bit lines by select gates. the number of valid blocks over th e device lifetime is as follows: min typ. max unit valid (good) block number 1004 ? 1024 block bad block test flow regarding invalid blocks, bad block mark is in either the 1st or the 2nd page. * 1: no erase operation is allowed to detected bad blocks bad block bad block pass read check start bad block * 1 last block end yes fail block no = 1 no block no. = block no. + 1 read check : read either column 0 or 2048 of the 1st page or the 2nd page of each block. if the data of the column is not ff (hex), define the block as a bad block.
TC58NVG0S3ETA00 2011-03-01c 61 (14) failure phenomena for prog ram and erase operations the device may fail during a program or erase operation. the following possible failure modes should be consid ered when implementing a highly reliable system. failure mode detection and countermeasure sequence block erase failure status read after erase block replacement page programming failure status read after program block replacement single bit programming failure ?1 to 0? ecc ? ecc: error correction code. 1 bit correction per 512 bytes is necessary. ? block replacement program erase when an error occurs during an erase operation, prevent future accesses to this bad block (again by creating a table within the system or by using another appropriate scheme). (15) do not turn off the power before write/erase operation is complete. avoid using th e device when the battery is low. power shortage and/or power failure before wr ite/erase operation is complete will cause loss of data and/or damage to data. (16) the number of valid blocks is on th e basis of single plane operations, and this may be decreased with two plane operations. when an error happens in block a, try to reprogram the data into another block (block b) by loading from an external buffer. then, prevent further system accesses to block a ( by creating a bad block table or by using another appropriate scheme). block a block b error occurs buffer memory
TC58NVG0S3ETA00 2011-03-01c 62 (17) reliability guidance this reliability guidance is intended to notify some guidance related to using nand flash with 1 bit ecc for each 512 bytes. for detailed reliability data, please refer to toshiba?s reliability note. although random bit errors may occur during use, it does not necessarily mean that a block is bad. generally, a block should be marked as bad when a progra m status failure or erase st atus failure is detected. the other failure modes may be recovered by a block erase. ecc treatment for read data is mandatory due to the following data retention and read disturb failures. ? write/erase endurance write/erase endurance failures may occur in a cell, page, or block, and are detected by doing a status read after either an auto program or au to block erase operation. the cumula tive bad block count will increase along with the number of write/erase cycles. ? data retention the data in memory may change after a certain amount of storage time. this is due to charge loss or charge gain. after block erasure and reprogramming, the block may become usable again. here is the combined characteristics image of write/erase endurance and data retention. ? read disturb a read operation may disturb the data in memory. th e data may change due to charge gain. usually, bit errors occur on other pages in the block, not the page being read. after a large number of read cycles (between block erases), a tiny charge may build up and can cause a cell to be soft programmed to another state. after block erasure and reprogramming, the block may become usable again. write/erase endurance [cycles] data retention [years]
TC58NVG0S3ETA00 2011-03-01c 63 package dimensions weight: 0.53g (typ.)
TC58NVG0S3ETA00 2011-03-01c 64 revision history date rev. description 2008-11-20 1.00 original version 2009-01-07 1.01 description for psl is added. 2009-03-09 1.02 description for psl is eliminated. descriptions of application notes and comments (5) and (7) are changed. 2009-07-03 1.03 trhoh is changed from 25ns to 22ns. 2009-07-09 1.04 modified ?features?. revised ?application notes and comments ? (14). trst is changed. 2010-01-25 1.05 deleted an invalid description at page 30. deleted confidential notation. changed ?restrictions on product use?. 2010-05-21 1.06 corrected timing diagram of id read. 2010-07-13 1.07 deleted tentative notation. 2011-03-01 1.08 tr is changed.
TC58NVG0S3ETA00 2011-03-01c 65 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (colle ctively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduced without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situat ions in which a malfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest ve rsions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and applicat ion notes for product and the precautions and condi tions set forth in the "toshiba se miconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications , including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or sy stems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is presented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, w hether express or implied, by estoppel or otherwise. ? absent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related soft ware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the japanese foreign exchange and foreign trade law and the u.s. expor t administration regulations. ex port and re-export of product or related software or technology are strictly prohibited exc ept in compliance with all applicable export laws and regulations. ? product is subject to foreign exchange and foreign trade control laws. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result o f noncompliance with applicable laws and regulations.

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